| PART |
Description |
Maker |
| FAMP0417CAX-W70E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| EM6320FP32BT-12LL EM6320FP32BT-12S EM6320FP32BT-55 |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM646FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| AS6C4016 |
256K X 16 BIT SUPER LOW POWER CMOS SRAM
Fully static operation
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Alliance Semiconductor ...
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| CMP0417AAX-E CMP0417AAX-F70E CMP0417AA1 CMP0417AA2 |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
|
